MRAM- Magnetoresistive Random Access Memory

Magnetoresistive Random Access Memory (MRAM) is a non-volatile computer memory (NVRAM) technology, which has been in development since the 1990s.

Unlike conventional RAM chip technologies data is not stored as electric charges but by magnetic charges.

In MRAM data can be stored in greater amount and can be accessed faster while consuming less battery power compare to conventional electronic  memory.

Conventional memory chips like RAM stores information as long as power is on,once power is turned off the information is lost unless it is stored in secondary memory.But in MRAM the information still remains in memory even when the power is turned off.

IBM,Motorola,Honeywell,HP,Hitachi,Siemens are working on MRAM.